Current Control Semiconductor Device and Control Device Using the Same

ABSTRACT

A current control semiconductor device that can detect a current with high precision within an IC of one chip by dynamically correcting a variation in a gain a and an offset b, and a control device using the semiconductor device are provided. A transistor  4 , a current-voltage converter circuit  22 , and an AD converter  23  are disposed on an identical semiconductor chip. Reference current generator circuits  6  and  6 ′ superimpose a current pulse Ic on a current of a load  2 , and vary a voltage digital value output by the AD converter. A gain/offset correction unit  8  subjects a variation in a voltage digital value caused by the reference current generator circuits  6, 6 ′ to signal processing, and dynamically acquires gains a, a′ and offsets b, b′ in a linear relational expression of the voltage digital value output by the AD converter  23  and a current digital value of the load. A current digital value calculation unit  12  corrects a voltage value output by the AD converter with the use of the gain and the offset acquired by the gain/offset correction unit  8.

TECHNICAL FIELD

The present invention relates to a current control semiconductor device,and a control device using the semiconductor device, and moreparticularly to a current control semiconductor device suitable for acurrent detector circuit incorporated into an IC chip, and a controldevice using the semiconductor device.

BACKGROUND ART

Electric actuators such as motors or solenoids have been extensivelyused for converting an electric signal into a mechanical motion or ahydraulic pressure as various objects to be controlled areelectronically controlled. In order to upgrade those electric actuators,a high-precision current control is essential. In recent years, for thepurpose of conducting a high-precision current control, it is general touse a digital feedback control.

For the purpose of conducting a current digital feedback control, thereis a need to acquire a digital value Ioutd of a load current value Ioutto be controlled. To achieve this, an output Vout of a current-voltageconverter circuit is subjected to digital conversion by an AD converterto obtain a relative digital value Voutd (=Vout/Vref) to a referencevoltage Vref of the AD converter. Then, the output Voutd of the ADconverter is subjected to a correction corresponding to an input/outputcharacteristic of a current detector circuit including thecurrent-voltage converter circuit and the AD converter to obtain thedigital value Ioutd of the current.

Various configurations of the current detector circuit have beenproposed. From the viewpoint of simplifying a control algorithm, it isdesirable to make the input/output characteristic of the currentdetector circuit linear, and in this case, the current digital valueIoutd is obtained by Expression (1) with the use of a gain a and anoffset b.

Ioutd=a·Voutd+b  (1)

When the current value is measured according to Expression (1), it isimportant how the gain a and the offset b match the characteristic of areal current detector circuit with high precision, for the purpose ofimproving a current measurement precision.

Also, needs of the downsized control device and the lower prices arehigh in addition to the high-precision current control, and the currentdetector circuit is incorporated into an IC chip to respond to thoseneeds. A current detection resistor incorporated into the IC chip toincorporate the current detector circuit into the IC chip has been known(for example, refer to PTL 1 and PTL 2).

CITATION LIST Patent Literature

-   PTL 1: JP-A-2003-203805-   PTL 2: JP-A-2006-165100

SUMMARY OF INVENTION Technical Problem

A method of incorporating the current detection resistor into the ICchip is excellent in the downsized device and the lower price because anexternal component for current detection can be reduced.

However, a value of the resistor formed within the IC chip is varied bytens of % depending on a temperature, and this value appears as avariation of the gain a in Expression (1) as it is. Also, the variationof the reference voltage Vref of the AD converter used in the digitalconversion of the detected current value also causes a variation of thegain a by several %. Further, the offset b in Expression (1) is alsovaried by several % due to an input offset of an operational amplifierused in the current detector circuit.

In this way, there arises such a problem that when the current detectorcircuit is incorporated into the IC chip, the gain a and the offset b inExpression (1) are largely varied as compared with designed values, anda current detection error increases.

An object of the present invention is to provide a current controlsemiconductor device that can detect a current with high precisionwithin an IC of one chip by dynamically correcting the variations of thegain a and the offset b, and a control device using the semiconductordevice.

Solution to Problem

(1) In order to achieve the above object, according to the presentinvention, there is provided a current control semiconductor devicehaving, on an identical semiconductor chip, a transistor that drives aload, a current-voltage converter circuit that converts a current of theload into a voltage, and an AD converter that converts an output voltageof the current-voltage converter circuit into a digital value, thecurrent control semiconductor device including: a reference currentgeneration unit that superimposes a current pulse on a current of theload to vary a voltage digital value output by the AD converter; again/offset correction unit that subjects a variation in the voltagedigital value by the reference current generation unit to signalprocessing to dynamically acquire a gain and an offset in a linearrelational expression of the voltage digital value output by the ADconverter and a current digital value of the load; and a current digitalvalue calculation unit that corrects a voltage value output by the ADconverter with the use of the gain and offset acquired by thegain/offset correction unit.

With the above configuration, the variation in the gain a and the offsetb is dynamically corrected to enable a high-precision current detectionwithin the IC of one chip.

(2) In the above item (1), preferably, there is provided a correctionmeasured value holding unit that holds a current value of the currentpulse measured from the external with high precision, in which thegain/offset correction unit dynamically acquires the gain in the linearrelational expression of the voltage digital value output by the ADconverter and the current digital value of the load with the use of thecurrent value of the current pulse held by the correction measured valueholding unit, and a signal processing result of the voltage digitalvalue.

(3) In the above item (2), preferably, a current of the current pulse isgenerated with the use of a resistor and a reference voltage.

(4) In the above item (2), preferably, a cycle of the current pulse isan integral multiple of the sampling cycle of the AD converter.

(5) In the above item (2), preferably, when a current is controlled byPWM, a cycle of the current pulse is an integral multiple of the PWMcycle.

(6) Also, in order to achieve the above object, according to the presentinvention, there is provided a control device including a currentcontrol semiconductor device, and a microcontroller that controls thecurrent control semiconductor device, the current control semiconductordevice having, on an identical semiconductor chip, a transistor thatdrives a load, a current-voltage converter circuit that converts acurrent of the load into a voltage, and an AD converter that converts anoutput voltage of the current-voltage converter circuit into a digitalvalue, in which the current control semiconductor device includes: areference current generation unit that superimposes a current pulse on acurrent of the load to vary a voltage digital value output by the ADconverter; a gain/offset correction unit that subjects a variation inthe voltage digital value by the reference current generation unit tosignal processing to dynamically acquire a gain and an offset in alinear relational expression of the voltage digital value output by theAD converter and a current digital value of the load; and a currentdigital value calculation unit that corrects a voltage value output bythe AD converter with the use of the gain and offset acquired by thegain/offset correction unit.

With the above configuration, the variation in the gain a and the offsetb is dynamically corrected to enable a high-precision current detectionwithin the IC of one chip, and a control precision of the control devicecan be improved.

Advantageous Effects of Invention

According to the present invention, the variation in the gain a and theoffset b is dynamically corrected to enable the high-precision currentdetection within the IC of one chip.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram illustrating a configuration of a currentcontrol semiconductor device according to one embodiment of the presentinvention.

FIG. 2A is a block diagram illustrating a configuration of a currentdetector circuit used in the current control semiconductor deviceaccording to one embodiment of the present invention.

FIG. 2B is a block diagram illustrating a configuration of a currentdetector circuit used in the current control semiconductor deviceaccording to one embodiment of the present invention.

FIG. 3A is a block diagram illustrating a configuration of a referencecurrent generator circuit used in the current control semiconductordevice according to one embodiment of the present invention.

FIG. 3B is a block diagram illustrating a configuration of a referencecurrent generator circuit used in the current control semiconductordevice according to one embodiment of the present invention.

FIG. 4A is an illustrative view of a method for correcting a gain and anoffset in the current control semiconductor device according to oneembodiment of the present invention.

FIG. 4B is an illustrative view of a method for correcting a gain and anoffset in the current control semiconductor device according to oneembodiment of the present invention.

FIG. 5 is an illustrative view of a method for correcting a gain and anoffset in the current control semiconductor device according to oneembodiment of the present invention.

FIG. 6 is a block diagram illustrating a configuration of a currentcontrol semiconductor device according to another embodiment of thepresent invention.

FIG. 7 is a block diagram illustrating a configuration of a referencecurrent generator circuit used in the current control semiconductordevice according to another embodiment of the present invention.

FIG. 8 is a block diagram illustrating a configuration of an automatictransmission control device using the current control semiconductordevice according to the respective embodiments of the present invention.

FIG. 9 is a block diagram illustrating a configuration of a brakecontrol device using the current control semiconductor device accordingto the respective embodiments of the present invention.

FIG. 10 is a block diagram illustrating a configuration of a brushlessmotor control device using the current control semiconductor deviceaccording to the respective embodiments of the present invention.

DESCRIPTION OF EMBODIMENTS

Hereinafter, a configuration and operation of a current controlsemiconductor device according to one embodiment of the presentinvention will be described with reference to FIGS. 1 to 5.

First, the configuration of the current control semiconductor deviceaccording to this embodiment will be described with reference to FIG. 1.

FIG. 1 is a block diagram illustrating the configuration of the currentcontrol semiconductor device according to one embodiment of the presentinvention.

A current control semiconductor device 1 includes a highside MOSFET 4, alowside MOSFET 5, reference current generator circuits 6, 6′, a currentdetector circuit 7, a gain/offset correction unit 8, a correctionmeasured value holding register 9, an IF circuit 10, and a test modecontrol unit 11.

The current control semiconductor device 1 is connected to a solenoid 2,and a battery 3 that applies a voltage to the solenoid 2, turns on/offthe voltage to be applied to the solenoid 2, controls a current flowingin the solenoid 2, and drives the solenoid 2 with the use of PWM (PulseWidth Modulation).

The highside MOSFET 4 is a switch disposed between the solenoid 2 andthe battery 3, which turns on when a gate signal Vg of the highsideMOSFET 4 is high level, and turns off when the gate signal Vg is lowlevel. A current flowing in the solenoid 2 increases when the highsideMOSFET 4 is on, and the lowside MOSFET 5 is off, and decreases when thehighside MOSFET 4 is off.

The lowside MOSFET 5 turns on during an off-period of the highsideMOSFET 4, and the lowside MOSFET 5 is used as a path along which thecurrent flowing in the solenoid 2 flows back when the highside MOSFET 4is off.

The current detector circuit 7 is connected in parallel to the highsideMOSFET 4, converts a current flowing in the highside MOSFET 4, that is,a current flowing in the solenoid 2 into a voltage, and outputs adigital value Voutd of the voltage. The reference current generatorcircuit 6 generates a reference current for correcting a gain a and anoffset b in Expression 1 representing a relationship between a currentdigital value flowing in the solenoid 2 and a voltage digital valueoutput by the current detector circuit 7.

A current detector circuit 7′ is connected in parallel to the lowsideMOSFET 5, converts a current flowing in the lowside MOSFET 5, that is, afeedback current when the highside MOSFET 4 is off into a voltage, andoutputs a digital value Vout′ of the voltage.

The reference current generator circuit 6 generates a reference currentfor correcting the gain a and the offset b in the above-mentionedExpression (1) representing a relationship between the current digitalvalue flowing in the solenoid 2 and the voltage digital value output bythe current detector circuit 7.

The reference current generator circuit 6′ generates a reference currentfor correcting the gain a and the offset b in Expression 1 representinga relationship between the current digital value flowing when a currentis fed back and a voltage digital value output by the current detectorcircuit 7′. In this example, for the purpose of distinguishing from thegain a and the offset b determined according to the output of thecurrent detector circuit 7, the gain and the offset are set as a gain a′and an offset b′, respectively.

When the highside MOSFET 4 is on, the lower reference current generatorcircuit 6 is driven, and when the lowside MOSFET 5 is on, the upperreference current generator circuit 6′ is driven.

The correction measured value holding register 9 holds current values Icand Ic′ of a current pulse generated by the reference current generatorcircuit 6, 6′, for correction of the gains a, a′, and the offsets b, b′of the gain/offset correction unit 8.

The gain/offset correction unit 8 corrects the gain a and the offset baccording to the output Voutd of the current detector circuit 7 and thecurrent value held by the correction measured value holding register 9,and outputs the corrected values to a current digital value calculationunit 12.

The current digital value calculation unit 12 outputs a digital valueIoutd of the current on the basis of the Voutd input from the currentdetector circuit 7, and the gains a, a′, and the offsets b, b′ inputfrom the gain/offset correction unit 8 through Expression (1).

The IF circuit 10 provides an interface function of reading and writingthe value Ic held by the correction measured value holding register 9from the external of the current control semiconductor device 1.

The test mode control unit 11 is started from the external through aterminal 14. When the test mode control unit 11 starts, the referencecurrent generator circuit 6, is controlled with the use of a controlsignal Cal_on to output a current flowing in the reference currentgenerator circuit 6 to a terminal 13 so that a current value flowinginto the reference current generator circuit 6 from the external can bemeasured. The measured current value Ic is held in the correctionmeasured value holding register 9 through the IF circuit 10. The startof the test mode control unit 11 from the external through the terminal14 is conducted before factory shipment of the current controlsemiconductor device 1.

Also, the test mode control unit 11 outputs a correction instruction Con the basis of information on an internal temperature T of the currentcontrol semiconductor device 1 to start the gain/offset correction unit8. Then, the gain/offset correction unit 8 corrects the gains a, a′, andthe offsets b, b′ according to the output Voutd of the current detectorcircuit 7 and the current value held by the correction measured valueholding register 9, and outputs the corrected values to the currentdigital value calculation unit 12. That is, when the present temperatureis changed from a temperature at which the gains a, a′, and the offsetsb, b′ have been previously corrected by a given temperature or higher,the test mode control unit 11 starts the gain/offset correction unit 8,corrects the gains a, a′, and the offsets b, b′, and outputs thecorrected values to the current digital value calculation unit 12. Theinternal temperature T of the current control semiconductor device 1 ismeasured with the use of a temperature dependency of a resistance valueformed within the current control semiconductor device 1.

Subsequently, a configuration of the current detector circuit 7 used inthe current control semiconductor device according to this embodimentwill be described with reference to FIGS. 2A and 2B.

FIGS. 2A and 2B are block diagrams illustrating the configuration of thecurrent detector circuit used in the current control semiconductordevice according to one embodiment of the present invention.

The current detector circuit 7 illustrated in FIG. 2A includes a senseMOSFET 21, which is on when the gate signal Vg is high level, that is,while a current is supplied to the highside MOSFET 4, and supplies acurrent divided at a division ratio determined according to anon-resistance ratio of the highside MOSFET 4 and the sense MOSFET 21 toa sense resistor Rsns 20. A differential amplifier 22 amplifies apotential difference between both ends of the sense resistor Rsns 20,and outputs a voltage value Vout. An AD converter 23 subjects the outputvoltage value Vout of the differential amplifier 22 to digitalconversion in a sampling period Ts, and outputs a relative digital valueVoutd=Vout/Vref to a reference voltage Vref.

Because the characteristics of the current detector circuit 7 describedabove is linear, a relationship between the digital value Ioutd of thecurrent and the output Voutd of the current detector circuit 7 can berepresented by Expression (1) with the use of the gain a and the offsetb.

The current detector circuit 7′ illustrated in FIG. 2B includes a senseMOSFET 21′, which is on when the gate signal Vg is high level, that is,while a current is supplied to the lowside MOSFET 5, and supplies acurrent divided at a division ratio determined according to anon-resistance ratio of the lowside MOSFET 5 and the sense MOSFET 21′ toa sense resistor Rsns 20′. A differential amplifier 22′ amplifies apotential difference between both ends of the sense resistor Rsns 20′,and outputs a voltage value Vout′. An AD converter 23′ subjects theoutput voltage value Vout′ of the differential amplifier 22′ to digitalconversion in the sampling period Ts, and outputs a relative digitalvalue Voutd′=Vout′/Vref′ to a reference voltage Vref′.

Because the characteristics of the current detector circuit 7′ describedabove is linear, a relationship between the digital value Ioutd of thecurrent and the output Voutd′ of the current detector circuit 7 can berepresented by Expression (1) with the use of the gain a′ and the offsetb′.

Subsequently, a configuration of the reference current generator circuit6 used in the current control semiconductor device according to thisembodiment will be described with reference to FIGS. 3A and 3B.

FIGS. 3A and 3B are block diagrams illustrating the configuration of thereference current generator circuit used in the current controlsemiconductor device according to one embodiment of the presentinvention.

The reference current generator circuit 6 illustrated in FIG. 3Aincludes a MOSFET 30 which is supplied with a current of a constantcurrent source 31 having a current value Ic1 when the gate signal Cal_onis high level.

The reference current generator circuit 6′ illustrated in FIG. 3Bincludes a MOSFET 30′ which is supplied with a current of a constantcurrent source 31′ having a current value Ic1′ when a gate signalCal_on′ is high level.

Subsequently, a method of correcting the gain a and the offset b in thecurrent control semiconductor device according to this embodiment willbe described with reference to FIGS. 4A and 4B.

FIGS. 4A and 4B are illustrative views of a method for correcting thegain and the offset in the current control semiconductor deviceaccording to one embodiment of the present invention.

In order to correct the gain a, the reference current generator circuit6 superimposes a current pulse having an amplitude of Ic and a cycle of2·Ts which is twice as large as the sampling period of the AD converter23 on a solenoid current, and varies the output Vout of the differentialamplifier 22.

In an example illustrated in FIG. 4A, the relative digital value Voutdseries output by the AD converter 23 is voltages Vs1, Vs2, . . . , Vs9,and the voltages Vs2, Vs4, . . . , Vs8 with even index among thosevoltages are digital values sampled when the current pulse of theamplitude Ic by the reference current generator circuit 6 is supplied.

In this example, midpoint voltages Vi2=Vs1+Vs3/2, Vi4=Vs3+Vs5/2, . . . ,Vi8=Vs7+Vs9/2 are calculated from Voutd series whose index is odd, andrespective differences from the voltages Vs2, Vs4, . . . , Vs8 whosecorresponding index is even are calculated to obtain difference voltagesΔV2, ΔV4, . . . , ΔV8. The difference voltages ΔV2, ΔV4, . . . ΔV8 thuscalculated are digital values of Vout variation generated by supplyingthe current pulse of the amplitude Ic to the solenoid current by thereference current generator circuit 6.

In order to suppress an influence on the solenoid current caused by thereference current supply, the amplitude Ic of the current pulsegenerated by the reference current generator circuit 6 is limited to besmall as compared with the solenoid current value. As a result, aquantization error of the respective difference voltage ΔV2, ΔV4, . . ., ΔV8 values becomes large, but the quantization error can be reduced bycalculating a mean value aveΔV.

Further, an output of the current detector circuit 7′ when the highsideMOSFET 4 is off, that is, when the lowside MOSFET 5 is on, can becalculated with the use of the reference current generator circuit 6′,likewise. In this situation, the pulse current Ic′ supplied asillustrated in FIG. 4B is superimposed on a minus side, and how toobtain the mean value ave (ΔV) is obtained by the following procedure,likewise.

One method of correcting the gain a′ and the offset b′ by thegain/offset correction unit 8 will be described with reference to FIG.4B.

In order to correct the gain a′, the reference current generator circuit6′ superimposes a current pulse having an amplitude of Ic′ and a cyclewhich is twice as large as the sampling period of the AD converter 23′on the solenoid current, and varies the output Vout′ of the differentialamplifier 22′. In the example illustrated in FIG. 4B, Voutd′ seriesoutput by the AD converter 23′ is Vs1′, Vs2′, . . . , Vs9′, and Vs2′,Vs4′, . . . , Vs8′ with even index among those voltages are digitalvalues sampled when the current pulse of the amplitude Ic′ by thereference current generator circuit 6′ is supplied.

In this example, midpoint Vi2′=(Vs1′+Vs3′/2, Vi4′=(Vs3′+Vs5′)/2, . . . ,Vi8′=(Vs7′+Vs9′)/2 are calculated from Voutd′ series whose index is odd,and respective differences from the voltages Vs2′, Vs4′, . . . , Vs8′whose corresponding index is even are calculated to obtain differencevoltages ΔV2′, ΔV4′, . . . , ΔV8′. The difference voltages ΔV2′, ΔV4′, .. . ΔV8′ thus calculated are digital values of Vout′ variation generatedby supplying the current pulse of the amplitude Ic′ to the solenoidcurrent by the reference current generator circuit 6′.

In order to suppress an influence on the solenoid current caused by thereference current supply, the amplitude Ic′ of the current pulsegenerated by the reference current generator circuit 6′ is limited to besmall as compared with the solenoid current value. As a result, aquantization error of the respective difference voltage ΔV2′, ΔV4′, . .. , ΔV8′ values becomes large, but the quantization error can be reducedby calculating a mean value ave (ΔV′).

The gains a and a′ in Expression (1) can be calculated with highprecision through Expression (2) with the use of ave(ΔV) and ave(ΔV′)thus obtained, and the supplied pulse currents Ic and Ic′.

a=Ic/ave(ΔV),a′=Ic′/ave(ΔV)  (2)

Also, the offsets b and b′ can be obtained through Expressions (1) and(2) with the use of Expression (3).

b=−a·Voutd_off,b′=−a′·Voutd′_off  (3)

In this example, the current value Ic1 (Ic1′) of the constant currentsource 31 (31′) is measured from the external with the use of the testmode control unit 11 with high precision, and the value is stored in anonvolatile memory in advance. When the current control semiconductordevice 1 starts, the value of Ic (Ic′) is transferred to the correctionmeasured value holding register 9 for current measurement through the IFcircuit 10 in advance.

As a result, the gain/offset correction unit 8 can measure the Voutd(Voutd′) variation at arbitrary timing requiring correction to obtainthe gain a (a′) and the offset b (b′) through Expressions (2) and (3)with the use of a value of the Ic (Ic′) stored in the correctionmeasured value holding register 9 for current measurement.

The correction error of the gain a (a′) and the offset b (b′) by thegain/offset correction unit 8 described above depends on an absoluteerror of the current value Ic (Ic′) of the constant current source 31(31′), but a current value of the constant current source does notdepend on the power supply or the temperature, but a variation of thecurrent value can approximate 0 in principle. Therefore, the gain a (a′)and the offset b (b′) can be corrected with high precision.

Hence, according to this embodiment, the gain a (a′) and the offset b(b′) can be corrected with high precision to measure the current withhigh precision.

In the above description, the reference current generator circuit 6superimposes the current pulse having the cycle of 2·Ts which is twiceas large as the sampling period of the AD converter 23 on the solenoidcurrent, but may superimpose a current pulse having a cycle which isanother integral multiple, three times, four times of the samplingperiod of the AD converter 23 on the solenoid current. For example, Tsof the sampling period of the AD converter 23 is about 10 μs. On theother hand, when the rising of the superimposed reference current Ic isearly, ΔV is obtained according to the principle described in FIG. 4 sothat an increment caused by the reference current Ic can be accuratelydetected. If the rising of the superimposed reference current Ic islate, ΔV may not accurately indicate the increment caused by thereference current Ic. In this case, the reference current generatorcircuit 6 superimposes the current pulse having a cycle which is anotherintegral multiple, three times, four times of the sampling period of theAD converter 23 on the solenoid current so as to detect the incrementcaused by the reference current Ic more precisely.

Another method of correcting the gains a, a′ and the offsets b, b′ inthe current control semiconductor device according to this embodimentwill be described with reference to FIG. 5.

FIG. 5 is an illustrative view of another method for correcting thegains a, a′, and the offsets b, b′ in the current control semiconductordevice according to one embodiment of the present invention.

In this example, the AD converter 23 illustrated in FIG. 2 is of a ΔΣmodulation system.

In order to correct the gain a, the reference current generator circuit6 superimposes a current pulse having an amplitude of Ic and a cyclewhich is twice as large as the PWM period on the solenoid current, andvaries the output Vout of the differential amplifier 22 for each PWMperiod. In the example illustrated in FIG. 5, the reference currentgenerator circuit 6 supplies the current pulse of the amplitude Ic in anon-interval 2 and an on-interval 4.

A Voutd mean value series and Vsave1, Vsave2, . . . , Vsave5 in the PWMon-period are acquired by the AD converter of the ΔΣ modulation system,and among them, Vsave2 and Vsave4 are mean values of Voutd in the PWMon-state where the current pulse of the amplitude Ic by the referencecurrent generator circuit 6 is supplied.

In this example, midpoint Viave2=(Vsave1+Vsave3)/2 andViave4=(Vsave3+Vsave5)/2 are calculated from the Voutd mean value serieswhose index is odd, and respective differences ΔVave2=Vsave2−Viave2 andΔVave4=Vsave4−Viave4 from Vsave2 and Vsave4 whose corresponding index iseven are obtained. ΔVave2 and ΔVave4 thus calculated are mean values ofthe Voutd variation generated by adding the current pulse of theamplitude Ic to the solenoid current by the reference current generatorcircuit 6.

In order to suppress an influence on the solenoid current caused by thereference current supply, the amplitude Ic of the current pulsegenerated by the reference current generator circuit 6 is limited to besmall as compared with the solenoid current value. As a result, aquantization error of the respective ΔVave2 and ΔVave4 comes large, butthe quantization error can be reduced by calculating the mean value ave(ΔVave) as ave (ΔV)=(ΔVave2+ΔVave4+ . . . ) /n.

Like the example of FIGS. 1 to 4, the output of the current detectorcircuit 7′ when the highside MOSFET 4 is off, that is, when the lowsideMOSFET 5 is on can be calculated with the reference current generatorcircuit 6′, likewise. In the example illustrated in FIG. 5, thereference current generator circuit 6′ supplies the current pulse of theamplitude Ic′ in an off-interval 2 and an off-interval 4. In thissituation, the current is superimposed on a minus side, but how toobtain the mean value ave(ΔV)′ is the same as that when the highsideMOSFET 4 is on.

Midpoint Viave2′=(Vsave1′+Vsave3′)/2 and

Viave4′=(Vsave3′+Vsave5′)/2 are calculated from the Voutd′ mean valueseries whose index is odd, and respective differencesΔVave2′=Viave2′−Vsave2′ and ΔVave4′=Viave4′−Vsave4′ from Vsave2′ andVsave4′ whose corresponding index is even are obtained. ΔVave2′ andΔVave4′ thus calculated are calculated with a mean value ave(ΔV)′ of theVoutd′ variation generated by adding the current pulse of the amplitudeIc′ to the solenoid current by the reference current generator circuit6′ as ave(ΔV)′=(ΔVave2′+ΔVave4′+ . . . )/n.

A real gain a in Expression (1) can be calculated with high precision asthe following Expression (4) with the use of ave(ΔVave) thus obtained,and Ic, Ic′.

a=Ic/ave(ΔV),a′=Ic′/ave(ΔV)  (4)

Further, as in the embodiment of FIGS. 1 to 4, the offsets b and b′ canbe obtained through Expression (1) and the following Expression (5) onthe basis of an output Voutd_off of the current detector circuit 7 whenthe highside MOSFET 4 is off.

b=−a·Voutd_off,b′=−a′·Voutd′_off  (5)

Through the above method, even when the AD converter of the ΔΣmodulation system in which sampling of the peak value is difficult inprinciple is used, the gain a and the offset b can be calculated withhigh precision. Because the circuit of the AD converter of the ΔΣmodulation system can be downsized, the costs of the current controlsemiconductor device can be reduced according to this embodiment.

As described above, according to this embodiment, the current pulse issuperimposed on the current of the load to vary the voltage digitalvalue output by the AD converter, and the variation in the voltagedigital value is subjected to the signal processing, thereby beingcapable of dynamically acquiring the gain in the linear relationalexpression of the voltage digital value output by the AD converter andthe current digital value of the load. Then, because the gain can becorrected at an arbitrary timing, the frequency of correction isincreased with the result that the current detection precision can beimproved.

Subsequently, a configuration and operation of a current controlsemiconductor device according to another embodiment of the presentinvention will be described with reference to FIGS. 6 and 7.

FIG. 6 is a block diagram illustrating the configuration of the currentcontrol semiconductor device according to another embodiment of thepresent invention. The same symbols as those in FIG. 1 indicateidentical parts. FIG. 7 is a block diagram illustrating a configurationof a reference current generator circuit used in the current controlsemiconductor device according to another embodiment of the presentinvention.

Referring to FIG. 6, in this embodiment, the reference current generatorcircuit 6 described in FIGS. 1 and 3 is implemented by a referencecurrent generator circuit 6A and an external resistor 60 having ahigh-precision resistance value Rref.

As illustrated in FIG. 7, the reference current generator circuit 6Aincludes the MOSFET 30, and the MOSFET 30 turns on when the gate signalCal_on is high level. An operational amplifier 70 controls a gatevoltage of a MOSFET 71 so that a terminal voltage of a GND 2 becomesequal to a reference voltage Vbgr input to a plus terminal of theoperational amplifier, as a result of which a current of Ic=Vbgr/Rrefflows therein.

In this example, in acquiring the reference current Ic, when not aminute current value flowing in the GND 2 terminal, but a voltage valueof the reference voltage Vbgr, specifically the reference voltage Vbgris generated by a band gap regulator, a voltage value of about 1.2V maybe measured. Therefore, a measurement unit necessary to acquire thereference current Ic can be simplified, and a measurement precision canbe further improved.

As described above, according to this embodiment, the current pulse issuperimposed on the current of the load to vary the voltage digitalvalue output by the AD converter, and the variation in the voltagedigital value is subjected to the signal processing, thereby beingcapable of dynamically acquiring the gain in the linear relationalexpression of the voltage digital value output by the AD converter andthe current digital value of the load. Then, because the gain can becorrected at an arbitrary timing, the frequency of correction isincreased with the result that the current detection precision can beimproved.

Also, since the current value of the constant current source iscorrected by using a value measured from the external with highprecision in advance, the correction precision can be improved.

Subsequently, a configuration and operation of an automatic transmissioncontrol device using the current control semiconductor device accordingto the respective embodiments of the present invention will be describedwith reference to FIG. 8.

FIG. 8 is a block diagram illustrating the configuration of theautomatic transmission control device using the current controlsemiconductor device according to the respective embodiments of thepresent invention. Referring to FIG. 8, the same symbols as those inFIG. 1 indicate identical parts.

An automatic transmission control device ATCU includes a microcontrollerCU which is a host control device of the current control semiconductordevice illustrated in FIG. 1, and a plurality of current controlsemiconductor devices 1 a, . . . , 1 e each corresponding to the currentcontrol semiconductor device 1.

The microcontroller 1 receives sensor values from an engine rotationspeed sensor 52, a shift lever position sensor 53, and an acceleratorpedal position sensor 54, and calculates an optimum transmission gearratio according to the input sensor values. The microcontroller 1 alsocalculates hydraulic instruction values of a plurality of clutches (notshown) equipped in a transmission 51, and current value instructionvalues of solenoids 20 a, . . . , 20 e corresponding to hydraulicpressures thereof for realizing the transmission gear ratio, and outputscurrent value instruction values Ia*, . . . , Ie* to the current controlsemiconductor devices 1 a, . . . , 1 e.

As described in the above-mentioned respective embodiments, because thecurrent detection precision can be improved by the current controlsemiconductor devices 1 a, . . . , 1 e, smooth shift transmission can beconducted, and a ride quality of a vehicle is improved.

In FIG. 8, the microcontroller CU receives the sensor values from threesensors of the engine rotation speed sensor 52, the shift lever positionsensor 53, and the accelerator pedal position sensor 54. Alternatively,the number or type of input sensors may be changed according to thetransmission control system. Also, in FIG. 8, the microcontroller CUreceives the sensor values directly from the sensors. Alternatively, themicrocontroller CU may receive the sensor values through anothermicrocontroller or an IC. Also, FIG. 8 illustrates an example in whichthe transmission 51 has five clutches. Alternatively, the number ofclutches, and the number of solenoid current control devicescorresponding to the clutches may be changed according to thetransmission mechanism.

Subsequently, a configuration and operation of a brake control deviceusing the current control semiconductor device according to therespective embodiments of the present invention will be described withreference to FIG. 9.

FIG. 9 is a block diagram illustrating the configuration of the brakecontrol device using the current control semiconductor device accordingto the respective embodiments of the present invention. Referring toFIG. 9, the same symbols as those in FIG. 1 indicate identical parts.

A brake control device BCU includes the microcontroller CU which is ahost control device of the current control semiconductor deviceillustrated in FIG. 1 and the current control semiconductor device 1.

The microcontroller CU receives sensor values from a brake pedalposition sensor 62 and a vehicle speed sensor 63, calculates an optimumbrake force of the brake according to the input sensor values,calculates a hydraulic instruction value of a hydraulic brake 61 and acurrent value instruction value of the solenoid 2 corresponding to thehydraulic pressure for realizing the brake force, and outputs a currentvalue instruction value I* to the current control semiconductor device1.

As described in the above-mentioned respective embodiments, because thecurrent detection precision can be improved by the current controlsemiconductor device 1, smooth brake can be conducted, and a ridequality of a vehicle is improved.

In FIG. 9, the microcontroller CU receives the sensor values from twosensors of the brake pedal position sensor 62 and the vehicle speedsensor 63. Alternatively, the number or type of input sensors may bechanged according to a brake system. Also, in FIG. 9, themicrocontroller CU receives the sensor values directly from the sensors.Alternatively, the microcontroller CU may receive the sensor valuesthrough another microcontroller or an IC.

Subsequently, a configuration and operation of a brushless motor controldevice using the current control semiconductor device according to therespective embodiments of the present invention will be described withreference to FIG. 10.

FIG. 10 is a block diagram illustrating the configuration of thebrushless motor control device using the current control semiconductordevice according to the respective embodiments of the present invention.Referring to FIG. 9, the same symbols as those in FIG. 1 indicateidentical parts.

A brushless motor control device MCU includes the microcontroller CUwhich is a host control device of the current control semiconductordevice illustrated in FIG. 1 and the current control semiconductordevice 1.

The microcontroller CU calculates three-phase current instruction valuesto three-phase coils Cu, Cv, and Cw of a motor 72 for realizing a targetrotation speed and torque of a motor, and outputs current valueinstruction values Iu*, Iv*, and Iw* to the current controlsemiconductor devices 1 a, . . . , 1 c.

As described in the above-mentioned respective embodiments, because thecurrent detection precision can be improved by the current controlsemiconductor devices 1 a, . . . , 1 c, smooth motor control can beconducted.

As described above, according to this embodiment, the current pulse issuperimposed on the current of the load to vary the voltage digitalvalue output by the AD converter, and the variation in the voltagedigital value is subjected to the signal processing, to therebydynamically acquire the gain in the linear relational expression of thevoltage digital value output by the AD converter and the current digitalvalue of the load. For that reason, because the gain can be corrected atan arbitrary timing, the frequency of correction is increased with theresult that the current can be detected with high precision. That is,since the variation in the gain a and the offset b is dynamicallycorrected, the current can be detected within the IC of one chip withhigh precision.

Also, since the current value of the constant current source iscorrected by using a value measured from the external with highprecision in advance, the correction precision can be improved.

REFERENCE SIGN LIST

-   1, current control semiconductor device-   2, solenoid-   3, battery-   4, highside MOSFET-   5, lowside MOSFET-   6, 6′, 6A, reference current generator circuit-   7, 7′, current detector circuit-   8, gain/offset correction unit-   9, correction measured value holding register-   10, IF circuit-   11, test mode control unit-   12, current digital value calculation unit

1. A current control semiconductor device having a transistor thatdrives a load, a current-voltage converter circuit that converts acurrent of the load into a voltage, and an AD converter that converts anoutput voltage of the current-voltage converter circuit into a digitalvalue on an identical semiconductor chip, the current controlsemiconductor device comprising: a reference current generation unitthat superimposes a current pulse on a current of the load to vary avoltage digital value output by the AD converter; a gain/offsetcorrection unit that subjects a variation in the voltage digital valueby the reference current generation unit to signal processing todynamically acquire a gain and an offset in a linear relationalexpression of the voltage digital value output by the AD converter and acurrent digital value of the load; and a current digital valuecalculation unit that corrects a voltage value output by the ADconverter with the use of the gain and offset acquired by thegain/offset correction unit.
 2. The current control semiconductor deviceaccording to claim 1, further comprising: a correction measured valueholding unit that holds a current value of the current pulse measuredfrom the external with high precision, wherein the gain/offsetcorrection unit dynamically acquires the gain in the linear relationalexpression of the voltage digital value output by the AD converter andthe current digital value of the load with the use of the current valueof the current pulse held by the correction measured value holding unit,and a signal processing result of the voltage digital value.
 3. Thecurrent control semiconductor device according to claim 2, wherein acurrent of the current pulse is generated with the use of a resistor anda reference voltage.
 4. The current control semiconductor deviceaccording to claim 2, wherein a cycle of the current pulse is anintegral multiple of the sampling cycle of the AD converter.
 5. Thecurrent control semiconductor device according to claim 2, wherein whena current is controlled by PWM, a cycle of the current pulse is anintegral multiple of the PWM cycle.
 6. A control device including acurrent control semiconductor device, and a microcontroller thatcontrols the current control semiconductor device, wherein the currentcontrol semiconductor device includes, on an identical semiconductorchip, a transistor that drives a load, a current-voltage convertercircuit that converts a current of the load into a voltage, and an ADconverter that converts an output voltage of the current-voltageconverter circuit into a digital value, wherein the current controlsemiconductor device comprises: a reference current generation unit thatsuperimposes a current pulse on a current of the load to vary a voltagedigital value output by the AD converter; a gain/offset correction unitthat subjects a variation in the voltage digital value by the referencecurrent generation unit to signal processing to dynamically acquire again and an offset in a linear relational expression of the voltagedigital value output by the AD converter and a current digital value ofthe load; and a current digital value calculation unit that corrects avoltage value output by the AD converter with the use of the gain andoffset acquired by the gain/offset correction unit.